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25 October 2004 Uncooled directly modulated 1.3-μm AlGaInAs-MQW DFB laser diodes
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Abstract
We have proved that short cavity length and large coupling coefficient structure can increase the relaxation oscillation frequency of directly modulated 1.3mm DFB-LDs for 10Gb/s operation. The grating with large coupling coefficient can be made of high refractive index InGaAsP material (=narrow band gap energy material), which has to be fabricated in the n-type InP cladding layer to prevent large hole and electron accumulation in the grating layer. By using this grating, 1.3mm AlGaInAs quarter lambda phase shifted DFB-LDs successfully revealed excellent eye diagrams with over 10% margin for OC-192 mask at the temperature range of 25-95 deg.C. Furthermore, we newly propose multi-phase shifted gating to 10Gb/s quarter lambda phase-shifted DFB-LDs to suppress the deterioration of eye diagrams due to non-uniform longitudinal distribution of light intensity and carrier density.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshitaka Aoyagi, Satoshi Shirai, Kazuhisa Takagi, Tohru Takiguchi, Yutaka Mihashi, Chikara Watatani, and Takashi Nishimura "Uncooled directly modulated 1.3-μm AlGaInAs-MQW DFB laser diodes", Proc. SPIE 5595, Active and Passive Optical Components for WDM Communications IV, (25 October 2004); https://doi.org/10.1117/12.570996
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