25 October 2004 Light amplification on silicon using highly confined photonic structures
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Proceedings Volume 5597, Nanophotonics for Communication: Materials and Devices; (2004) https://doi.org/10.1117/12.571685
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
We show high Raman gain in Silicon submicron-size strip waveguide. Using high confinement structures and pico-second pump pulses, we show 13.2-dB peak gain with 14.6-W peak pump power in a 7-mm long waveguide. The effect of free-carrier absorption is observed. We show a pico-second all-optical switch based on the Silicon waveguide, whose transmission is enhanced by the Raman gain.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qianfan Xu, Vilson R. Almeida, Michal F. Lipson, "Light amplification on silicon using highly confined photonic structures", Proc. SPIE 5597, Nanophotonics for Communication: Materials and Devices, (25 October 2004); doi: 10.1117/12.571685; https://doi.org/10.1117/12.571685
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