25 October 2004 Light amplification on silicon using highly confined photonic structures
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Proceedings Volume 5597, Nanophotonics for Communication: Materials and Devices; (2004) https://doi.org/10.1117/12.571685
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
We show high Raman gain in Silicon submicron-size strip waveguide. Using high confinement structures and pico-second pump pulses, we show 13.2-dB peak gain with 14.6-W peak pump power in a 7-mm long waveguide. The effect of free-carrier absorption is observed. We show a pico-second all-optical switch based on the Silicon waveguide, whose transmission is enhanced by the Raman gain.
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Qianfan Xu, Qianfan Xu, Vilson R. Almeida, Vilson R. Almeida, Michal F. Lipson, Michal F. Lipson, } "Light amplification on silicon using highly confined photonic structures", Proc. SPIE 5597, Nanophotonics for Communication: Materials and Devices, (25 October 2004); doi: 10.1117/12.571685; https://doi.org/10.1117/12.571685
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