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29 December 2004 AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range
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In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x1016 cm-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 1016 to 1019 cm-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x1016 to 3x1018 cm-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration ND-NA in the 1017 cm-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 107 cm-2 range.
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Alexander S. Usikov, Elizaveta V. Shapvalova, Yuri V. Melnik, Vladimir A. Ivantsov D.V.M., Vladimir A. Dmitriev, Charles J. Collins, Anand V. Sampath, Gregory A. Garrett, Paul Hongen Shen, and Michael Wraback "AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range", Proc. SPIE 5617, Optically Based Biological and Chemical Sensing for Defence, (29 December 2004);

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