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23 December 2004 High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications
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Abstract
We have developed Fabry-Perot lasers at λ=852nm, using an Aluminium free active region with the aim to develop a single-frequency and single-mode device for atomic clocks for the future European positioning system Galileo. The device is a separate confinement heterostructure with a GaInP large optical cavity and a 8nm compressive-strained GaInAsP quantum well. The broad-area laser diodes are characterised by low internal losses (<3 cm-1), a high internal efficiency (94%) and a low transparency current density (100A/cm2). We obtain a low threshold current density (245A/cm2) and a high slope efficiency (0.9 W/A) for 2mm long broad area (100μm wide) AR/HR coated devices. We measure an optical power of more than 5.5W (I= 8.5A), under CW operation at 15°C, with a maximum wall-plug efficiency of 0.45. The laser emission is achieved up to at least 115°C. An optical power of more than 1.4W is obtained at 100°C (I=3.6A). At 852nm, we obtain an optical power of 1.2W (I=1.7A, 15°C). The low divergences of the fast axis far field - a FWHM of 31.8° and a total angle of 61.8° at 1/e2- are very stable with the current.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francois-Julien Vermersch, Michel Lecomte, Michel Calligaro, Olivier Parillaud, Shailendra Bansropun, Michel Garcia, and Michel Krakowski "High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications", Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); https://doi.org/10.1117/12.572932
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