Optical parametric oscillator based on microstructured GaAs

Konstantin L. Vodopyanov; Ofer Levi; Paulina S. Kuo; Thierry J. Pinguet; James S. Harris; Martin M. Fejer; B. Gerard; L. Becouarn; Eric Lallier

doi:10.1117/12.578449

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23 December 2004 Optical parametric oscillator based on microstructured GaAs

Konstantin L. Vodopyanov, Ofer Levi, Paulina S. Kuo, Thierry J. Pinguet, James S. Harris, Martin M. Fejer, B. Gerard, L. Becouarn, Eric Lallier

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Proceedings Volume 5620, Solid State Laser Technologies and Femtosecond Phenomena; (2004) https://doi.org/10.1117/12.578449
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom

Abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 μm. By tuning either the near-IR pump wavelength between 1.75 and 2 μm, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 μm, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 μJ for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

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Konstantin L. Vodopyanov, Ofer Levi, Paulina S. Kuo, Thierry J. Pinguet, James S. Harris, Martin M. Fejer, B. Gerard, L. Becouarn, and Eric Lallier "Optical parametric oscillator based on microstructured GaAs", Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); https://doi.org/10.1117/12.578449

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