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23 December 2004 Optical parametric oscillator based on microstructured GaAs
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Abstract
We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 μm. By tuning either the near-IR pump wavelength between 1.75 and 2 μm, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 μm, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 μJ for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konstantin L. Vodopyanov, Ofer Levi, Paulina S. Kuo, Thierry J. Pinguet, James S. Harris, Martin M. Fejer, B. Gerard, L. Becouarn, and Eric Lallier "Optical parametric oscillator based on microstructured GaAs", Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); https://doi.org/10.1117/12.578449
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