21 October 2004 Interferometric lithography at 46.9 nm
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Proceedings Volume 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications; (2004) https://doi.org/10.1117/12.592201
Event: 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, 2004, Porlamar, Venezuela
Abstract
We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Capeluto, M. G. Capeluto, Georgiy O. Vaschenko, Georgiy O. Vaschenko, Michael E. Grisham, Michael E. Grisham, Mario C. Marconi, Mario C. Marconi, Carmen S. Menoni, Carmen S. Menoni, Jorge J.G. Rocca, Jorge J.G. Rocca, S. Luduena, S. Luduena, L. Pietrasanta, L. Pietrasanta, } "Interferometric lithography at 46.9 nm", Proc. SPIE 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, (21 October 2004); doi: 10.1117/12.592201; https://doi.org/10.1117/12.592201
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