Silicon quadrant detector in CMOS technology

Alicia Vera-Marquina; Alfonso Torres Jacome

doi:10.1117/12.591669

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21 October 2004 Silicon quadrant detector in CMOS technology

Alicia Vera-Marquina, Alfonso Torres Jacome

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Proceedings Volume 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications; (2004) https://doi.org/10.1117/12.591669
Event: 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, 2004, Porlamar, Venezuela

Abstract

An optoelectronic device that detect visible light is designed in silicon technology, peaking in 650 nm wavelength. The quadrant detector (QD) derive photocurrents by projecting a light spot on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm² per active area by each quadrant and the size of the device is 9 mm². This work describes a technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity. We propose to integrate sensor into complementary metal-oxide-semiconductor (CMOS) technology in order to improve photodetector out signal, reducing noise generated when photodetector is so far from data acquisition system.

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Alicia Vera-Marquina and Alfonso Torres Jacome "Silicon quadrant detector in CMOS technology", Proc. SPIE 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, (21 October 2004); https://doi.org/10.1117/12.591669

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