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31 January 2005 Applications of ICP in optoelectronic device fabrication
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Abstract
Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl2/CH4/N2 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH4/H2 ICP InP sub-micron grating etching using SiNx mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl2/CH4/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).
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Yi Gan, Jun Zhang, Shan Jiang, Xiaodong Huang, Ning Zhou, and Ligang Deng "Applications of ICP in optoelectronic device fabrication", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.575729
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