Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo; Y H. Chang; Y. A. Chang; K. F. Tseng; L. H. Laih; S. C. Wang; Hsin-Chieh Yu; Chia-Pin Sung; Hung-Pin D. Yang

doi:10.1117/12.577050

31 January 2005 Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo, Y H. Chang, Y. A. Chang, K. F. Tseng, L. H. Laih, S. C. Wang, Hsin-Chieh Yu, Chia-Pin Sung, Hung-Pin D. Yang

Author Affiliations +

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.577050
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ~0.4 mA, and slope efficiencies of ~ 0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA)^1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semi-insulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

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Hao-Chung Kuo, Y H. Chang, Y. A. Chang, K. F. Tseng, L. H. Laih, S. C. Wang, Hsin-Chieh Yu, Chia-Pin Sung, and Hung-Pin D. Yang "Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.577050

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