31 January 2005 GaAs/GaAs0.89Sb0.11 double heterojunction bipolar transistors (DHBTs) grown by SSMBE with a GaAs decomposition source
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Abstract
For reducing turn-on voltage of GaAs-based HBT, Al0.25Ga0.75As/GaAs0.89Sb0.11/GaAs DHBTs on GaAs (001) is successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaAs decomposition source, no misfit dislocation in the base layer was found by observation of SEM. It suggests that GaAsSb base layer is fully strained. Device with 75x75μm2 emitter mesa area is fabricated using this structure and yielded an excellent performance with high current gain of 30 at the collector current density of 2×103A/cm2 and low turn-on voltage of 0.8V. Due to the smaller band gap of the GaAsSb base layer, GaAsSb is useful material for reducing turn-on voltage of GaAs-based HBTs.
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Ping-Juan Niu, Ping-Juan Niu, Haiyang Hu, Haiyang Hu, Hong-Wei Dong, Hong-Wei Dong, Wenxin Wang, Wenxin Wang, Junming Zhou, Junming Zhou, } "GaAs/GaAs0.89Sb0.11 double heterojunction bipolar transistors (DHBTs) grown by SSMBE with a GaAs decomposition source", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575247; https://doi.org/10.1117/12.575247
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