Paper
31 January 2005 High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors
Yongqing Huang, Xiaomin Ren, Hui Huang, Qi Wang, Xingyan Wang
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Abstract
In this paper, we demonstrate the design, fabrication and characterization of a long wavelength InP-based resonant cavity photodetector with InP/air-gap Bragg reflectors by using selective wet etching. The bottom mirror of the RCE photodetector is the InP/air-gap Bragg reflector; the top mirror is formed by the interface of semiconductor/air. The In0.53Ga0.47As absorption layer thickness is 300nm. A peak quantum efficiency of 60% at 1510nm and a 3-dB bandwidth of 16GHz are achieved with the active area of 50×50μm2. The dark current as low as 2nA was achieved at reverse bias of 3.0V.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongqing Huang, Xiaomin Ren, Hui Huang, Qi Wang, and Xingyan Wang "High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.580157
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Cited by 3 scholarly publications.
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KEYWORDS
Photodetectors

Reflectors

Mirrors

Gallium

Absorption

Reflectivity

Semiconductors

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