31 January 2005 High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors
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In this paper, we demonstrate the design, fabrication and characterization of a long wavelength InP-based resonant cavity photodetector with InP/air-gap Bragg reflectors by using selective wet etching. The bottom mirror of the RCE photodetector is the InP/air-gap Bragg reflector; the top mirror is formed by the interface of semiconductor/air. The In0.53Ga0.47As absorption layer thickness is 300nm. A peak quantum efficiency of 60% at 1510nm and a 3-dB bandwidth of 16GHz are achieved with the active area of 50×50μm2. The dark current as low as 2nA was achieved at reverse bias of 3.0V.
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Yongqing Huang, Yongqing Huang, Xiaomin Ren, Xiaomin Ren, Hui Huang, Hui Huang, Qi Wang, Qi Wang, Xingyan Wang, Xingyan Wang, } "High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.580157; https://doi.org/10.1117/12.580157

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