High-volume production of 650nm GaInP/AlGaInP laser diodes

Wei Xia; Ling Wang; Shuqiang Li; Zhongxiang Ren; Xiangang Xu

doi:10.1117/12.573862

31 January 2005 High-volume production of 650nm GaInP/AlGaInP laser diodes

Wei Xia, Ling Wang, Shuqiang Li, Zhongxiang Ren, Xiangang Xu

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.573862
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

With the support of state key project, Shandong Huaguang Optoelectronics Co. Ltd. realizes the mass production of low threshold current 650nm GaInP/AlGaInP semiconductor laser chips, rapidly. At present, six million 650nm LD chips can be produced per month. The lowest threshold current at 25°C is 7.4mA. The slope efficiency reaches 1.1mW/mA and the output power is 34mW at 40mA CW operation.

Citation Download Citation

Wei Xia, Ling Wang, Shuqiang Li, Zhongxiang Ren, and Xiangang Xu "High-volume production of 650nm GaInP/AlGaInP laser diodes", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.573862

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