Translator Disclaimer
Paper
31 January 2005 High-volume production of 650nm GaInP/AlGaInP laser diodes
Author Affiliations +
Abstract
With the support of state key project, Shandong Huaguang Optoelectronics Co. Ltd. realizes the mass production of low threshold current 650nm GaInP/AlGaInP semiconductor laser chips, rapidly. At present, six million 650nm LD chips can be produced per month. The lowest threshold current at 25°C is 7.4mA. The slope efficiency reaches 1.1mW/mA and the output power is 34mW at 40mA CW operation.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Xia, Ling Wang, Shuqiang Li, Zhongxiang Ren, and Xiangang Xu "High-volume production of 650nm GaInP/AlGaInP laser diodes", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.573862
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

CW operation of broad area AlGaAs GaAs diode lasers grown...
Proceedings of SPIE (December 06 2005)
Quantum-cascade lasers without injector regions
Proceedings of SPIE (February 26 2007)
High-power Al-free SCH-SQW lasers grown by LPE
Proceedings of SPIE (January 20 2005)
Blue/green laser diodes based on ZnMgSSe
Proceedings of SPIE (December 21 1994)

Back to Top