31 January 2005 Limits of high-modulation bandwidth of VCSELs
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Abstract
The light intensity response and the transfer function of laser are given in small signal in order invest the upper modulation frequency of VCSELs. The cures of the relaxation oscillation frequency and -3dB bandwidth versus the differential gain coefficient and the spontaneous emission lifetime are presented. The results show that the high speed modulation characteristics can be achieved by increasing the differential gain. We also find out the modulation frequency of VCSELs is improved by decreasing carrier lifetime in the quantum well VCSELs. The spontaneous emission lifetime versus the cavity length is also presented due to the micro-cavity effect. The ultimate limit of direct modulation bandwidth in VCSELs is explored. A new scheme to increase the modulation bandwidth is proposed.
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Hong-Dong Zhao, Hong-Dong Zhao, Ping He, Ping He, Mei Sun, Mei Sun, Huai-Peng Wei, Huai-Peng Wei, Yan Li, Yan Li, Tong Chen, Tong Chen, Lian-Wei Liang, Lian-Wei Liang, Tie-Gen Liu, Tie-Gen Liu, } "Limits of high-modulation bandwidth of VCSELs", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.569230; https://doi.org/10.1117/12.569230
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