31 January 2005 Novel measurement of traveling-wave semiconductor optical amplifier with tensile-strained-barrier MQW structure
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Abstract
A novel technique is presented in obtaining the performance characteristics of traveling-wave semiconductor optical amplifier (TWA) with tensile-strained-barrier multiple-quantum-well structure. In-out fiber ends of TWA are used to construct an external cavity resonator to produce big ripple on amplified spontaneous emission (ASE) spectrum. By this means, Hakki-Paoli method is adopted to obtain gain and differential gain spectra over a wide spectral range. From measured longitudinal mode spacing and peak wavelength shift due to increased bias current, we further calculate the effective refractive index, carrier-induced refractive index change and linewidth enhancement factor. Some special features about ASE mode spectrum shift and refractive index change above lasing threshold are revealed and explained.
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Qingyuan Miao, Qingyuan Miao, Dexiu Huang, Dexiu Huang, Lirong Huang, Lirong Huang, Tao Wang, Tao Wang, Xinliang Zhang, Xinliang Zhang, } "Novel measurement of traveling-wave semiconductor optical amplifier with tensile-strained-barrier MQW structure", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.574436; https://doi.org/10.1117/12.574436
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