Optical absorption in semiconductor nanorings under electric and magnetic fields

Tong-Yi Zhang; Jun-Cheng Cao; Wei Zhao

doi:10.1117/12.572527

31 January 2005 Optical absorption in semiconductor nanorings under electric and magnetic fields

Tong-Yi Zhang, Jun-Cheng Cao, Wei Zhao

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.572527
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

The optical absorption in semiconductor nanorings under a lateral DC field and a perpendicular magnetic field is numerically simulated by coherent wave approach. The exciton dominated optical absorption is compared with the free-carrier interband absorption to demonstrate the key role of Coulomb interaction between electron and hole. The influence of the lateral DC field and the perpendicular magnetic field on the optical absorption are discussed in detail. It shows that the lateral DC field can significantly enhance the Aharonov-Bohm effect of the neutral excitons in semiconductor nanorings.

Citation Download Citation

Tong-Yi Zhang, Jun-Cheng Cao, and Wei Zhao "Optical absorption in semiconductor nanorings under electric and magnetic fields", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.572527

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