Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu; Xiaopeng Zhu; Qiaoqiang Gan; Guofeng Song; Qing Cao; Liang Guo; Yuzhang Li; Lianghui Chen

doi:10.1117/12.574932

31 January 2005 Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu, Xiaopeng Zhu, Qiaoqiang Gan, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen

Author Affiliations +

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.574932
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

Citation Download Citation

Yun Xu, Xiaopeng Zhu, Qiaoqiang Gan, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, and Lianghui Chen "Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.574932

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