11 February 2005 Analysis of optical XOR gate performance based on cross-polarization modulation effect in semiconductor optical amplifier
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Proceedings Volume 5625, Optical Transmission, Switching, and Subsystems II; (2005); doi: 10.1117/12.572404
Event: Asia-Pacific Optical Communications, 2004, Beijing, China
Abstract
In this paper, for the first time, we analyze the optical exclusive OR (XOR) gate based on cross-polarization modulation (XPolM) effect in semiconductor optical amplifier (SOA) using nonlinear polarization rotation (NPR) theory. The extinction ratio (ER) of optical XOR gate, which reflects the performance of the gate, is calculated in consideration of the injected current, the length and the polarization angle of input signals of the SOA. The performance of the optical XOR gate can be optimized for some proper parameters of the SOA.
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Zhenbin Ge, Wanchun Yang, Min Zhang, Ling Wang, Peida Ye, "Analysis of optical XOR gate performance based on cross-polarization modulation effect in semiconductor optical amplifier", Proc. SPIE 5625, Optical Transmission, Switching, and Subsystems II, (11 February 2005); doi: 10.1117/12.572404; https://doi.org/10.1117/12.572404
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KEYWORDS
Polarization

Logic devices

Signal attenuation

Modulation

Polarizers

Semiconductor optical amplifiers

Mineralogy

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