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20 January 2005 Optically pumped vertical external-cavity surface-emitting lasers
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Abstract
We present an optically pumped vertical external cavity surface emitting lasers using the semiconductor gain chip composed of quantum wells. The dependence of the spectrum of the output on the temperature of the gain chip was measured. The maximum output power reached 40mW at the wavelength of 1015.5nm with the pump power of 1.5W. The optical conversion efficiency reached 2.7%.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanrong Song, Weiming Yu, Jianghai Hu, Zhigang Zhang, Yonggang Wang, Xiaoping Guo, Meng Chen, and Gang Li "Optically pumped vertical external-cavity surface-emitting lasers", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.575834
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