SCH-SQW semiconductor lasers

Yuxia Wang; Xiaohua Wang; Gang Zhong; Chunling Liu

doi:10.1117/12.577407

20 January 2005 SCH-SQW semiconductor lasers

Yuxia Wang, Xiaohua Wang, Gang Zhong, Chunling Liu

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.577407
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this paper, we have designed a laser structure with separate confinement single quantum well (SCH-SQW )and have grown the laser structure by MOCVD .Moreover we have also fabricated broad area structure .The lasers are cleaved into bars and coated with high and low reflectivity films (approximate 95% and 5%).The measured results of the device show that its threshold current is 1.95A ,The CW output power is 2W ,and the peak wavelength of the device is 910nm±2nm .

Citation Download Citation

Yuxia Wang, Xiaohua Wang, Gang Zhong, and Chunling Liu "SCH-SQW semiconductor lasers", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.577407

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