20 January 2005 Vertical-injection depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure
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Abstract
We present the first demonstration of the vertical-injection depleted optical thyristor-laser diode (VIDOT-LD) with InGaAs/InGaAsP multiple quantum well structure. The VIDOT-LD using the vertical-injection structure shows very good isolation between input and output signal. For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The measured switching voltage and current are 3.36 V and 10 μA respectively. The holding voltage and current are respectively 1.37 V and 100 μA. The lasing threshold current is 131 mA at 25°C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is no input signal.
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Woon-Kyung Choi, Doo-Gun Kim, Young-Wan Choi, Seok Lee, Deok Ha Woo, Young Tae Byun, Sun Ho Kim, "Vertical-injection depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.576767; https://doi.org/10.1117/12.576767
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