13 January 2005 Silicon microstructuring using ultrashort laser pulses
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Abstract
Microstructures develop spontaneously on silicon surface under the cumulative short laser pulses irradiation in different ambient atmospheres. The experimental results suggest that the ambient atmospheres and the laser pulse duration play key roles on the microstructures formation. Only in SF6 ambient, the sharp conical spikes develop. Under the picosecond laser irradiation, silicon surface is melted before the spike arrays formed, while under the femtosecond laser irradiation, the formation of spike array does not pass through the liquid phase. The optical absorption increases remarkably from ultraviolet (~0.25 μm) to the infrared (~19μm) for the microstructured silicon material, which promises for new device applications, such as solar cells, infrared photo-detector.
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Jingtao Zhu, Wen Li, Ming Zhao, Gang Yin, Xiao Chen, Deying Chen, Li Zhao, "Silicon microstructuring using ultrashort laser pulses", Proc. SPIE 5629, Lasers in Material Processing and Manufacturing II, (13 January 2005); doi: 10.1117/12.571965; https://doi.org/10.1117/12.571965
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