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12 January 2005 Electric field-induced quenching of photoluminescence from Ir(PPY)3 doped PVK
Yan Bing Hou, Yun Bai Li, Feng Teng, Xu Rong Xu
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Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.588295
Event: Photonics Asia, 2004, Beijing, China
Abstract
In this paper, the photoluminescence(PL) from thin films of factris(2-phenylpyridine) iridium (Ir(ppy)3) doped poly(N-vinylcarbazol) (PVK) modulated by forward bias and reverse bias was measured for the sake of studying the generation and evolution of triplet exciton. The results show that the electric field induced quenching of PL happens before the intersystem crossing from PVK to Ir(PPY)3. Once the triplet excitons at Ir(PPY)3 are formed by the energy transfer from PVK to Ir(PPY)3, it is difficult to dissociate the excitons at Ir(PPY)3. The triplet excitons locating at Ir(PPY)3 molecules is very stable. The electroluminescence mechanism of Ir(PPY)3 doped PVK is also investigated by . For different forward biases, no obvious difference in the profiles of PL spectra is observed, which excludes the influence of electric field and injected carriers on the intersystem crossing from PVK to Ir(PPY)3. Comparing EL spectra and the electric field modulated PL spectra of Ir(PPY)3 doped PVK, we can more reasonably deduce that the main EL emission from Ir(PPY)3 does not come from the energy transfer between PVK chains and Ir(PPY)3 molecules which obeys Föster rule, but comes from the direct recombination of injected carriers at Ir(PPY)3 molecules which act as both the carrier-trap and recombination centers.
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Yan Bing Hou, Yun Bai Li, Feng Teng, and Xu Rong Xu "Electric field-induced quenching of photoluminescence from Ir(PPY)3 doped PVK", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.588295
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KEYWORDS
Excitons
Electroluminescence
Molecules
Modulation
Energy transfer
Luminescence
Electrons
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