12 January 2005 Fabrication and properties for white LED with InGaN SQW
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Abstract
High brightness white light-emitting diode (LED) was fabricated by using the self-produced InGaN single quantum-well (SQW) blue LED chip and YAG:Ce3+ phosphor. The luminous intensity of the white LED was up to 2.3cd, the chromaticity coordinate was (0.28,0.34), and the color-rendering index was about 75 at forward current of 20mA and room temperature.
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Zhonghui Li, Zhonghui Li, Zhijian Yang, Zhijian Yang, Xiaomin Ding, Xiaomin Ding, Guoyi Zhang, Guoyi Zhang, Yuchun Feng, Yuchun Feng, Baoping Guo, Baoping Guo, Hanben Niu, Hanben Niu, } "Fabrication and properties for white LED with InGaN SQW", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.570640; https://doi.org/10.1117/12.570640
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