12 January 2005 Fabrication and properties for white LED with InGaN SQW
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High brightness white light-emitting diode (LED) was fabricated by using the self-produced InGaN single quantum-well (SQW) blue LED chip and YAG:Ce3+ phosphor. The luminous intensity of the white LED was up to 2.3cd, the chromaticity coordinate was (0.28,0.34), and the color-rendering index was about 75 at forward current of 20mA and room temperature.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhonghui Li, Zhonghui Li, Zhijian Yang, Zhijian Yang, Xiaomin Ding, Xiaomin Ding, Guoyi Zhang, Guoyi Zhang, Yuchun Feng, Yuchun Feng, Baoping Guo, Baoping Guo, Hanben Niu, Hanben Niu, } "Fabrication and properties for white LED with InGaN SQW", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.570640; https://doi.org/10.1117/12.570640


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