12 January 2005 Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy
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Abstract
Recently the growth techniques of single-crystalline ZnO film promote much attention to ZnO-related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical-source molecular beam epitaxy, and the epilays on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic miroscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He-Cd laser, and electrical properties were measured by Hall measurement. The n-type doping with Al was successfully performed up to 5 × 1019 cm-3. Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.
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Shuwei Li, Shuwei Li, Cairong Ding, Cairong Ding, Guowei Yang, Guowei Yang, Xiang Zhou, Xiang Zhou, Kazuto Koike, Kazuto Koike, "Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.570751; https://doi.org/10.1117/12.570751
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