12 January 2005 Study of Nd-implanted Si-based emitting film materials
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Abstract
The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM).The photoluminescence mechanism for our samples is also discussed.
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Meiling Yuan, Meiling Yuan, Qingnian Wang, Qingnian Wang, Shuifeng Wang, Shuifeng Wang, Xiaofeng Zhang, Xiaofeng Zhang, Le Jiang, Le Jiang, } "Study of Nd-implanted Si-based emitting film materials", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.573316; https://doi.org/10.1117/12.573316
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