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20 January 2005 Characteristic of vapor dynamic process for sulfur-doped n-type diamond films
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Abstract
Monte Carlo simulations are adopted to study the space distribution of the particles in the mixture of CH4/H2/H2S/Ar considering the avalanche collision and dissociative ionization of electrons based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The relationship between the space distribution and the recombination rate of H and CH3, CH3+ fragment particles is given. The dynamic process of the n-type doped diamond film is simulated under different gas pressure. The particle distributions of S, S+ and Ar+ are also obtained. The result is very important for investigation of n-type diamond film doping at low temperature.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qingxun Zhao, Xiaodong Qiao, Yinshun Wang, Jing Zhang, and Zheng Yan "Characteristic of vapor dynamic process for sulfur-doped n-type diamond films", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.573787
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