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20 January 2005 High-sensitivity photon-counting imaging detector
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Abstract
Theoretical foundation and principle programmer will be studied in this paper that special photosensitive Si-PSD (Si-Position Sensitive Detector) is rebuilt into electron bombardment mode device, which is based on minimal weak light detecting technical demands and exciting principle of high-energy electronic beam acting on silicon semiconductor. At the same time we will bring forward new concept device of electron bombardment mode PSD. According to the theoretical foundation and principle programmer, we present the practical measurement result that semiconductor gain of electron bombardment mode device is obtained. When incident electron energy is more than 4KeV, then obtained more than 103 gain. We have produced high-sensitivity photon-counting imaging detector (MCP-PSD tube) with 108~109 gain, which combined the research of microchannel plate (MCP) cascade applications with electron bombardment mode device. This paper also will present the substantial photograph of electron bombardment mode PSD device and MCP-PSD tube. Finally we will bring forward prospect realizing detection of minimal weak light photon-counting imaging.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lichen Fu, Ye Li, Qingduo Duanmu, Guozheng Wang, Kui Wu, Delong Jiang, and Jingquan Tian "High-sensitivity photon-counting imaging detector", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.573843
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