20 January 2005 Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN
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The contact resistivity of Ni/Au contact on p-type GaN was drastically decreased through the surface treatments in sequence using alcohol-based HCl and KOH solution. The surface oxide on p-type GaN formed during epitaxial growth was removed in the alcohol-based HCl and KOH solution, The O 1s and C 1s core-level peaks in the x-ray photoemission spectra showed that the alcohol-based HCl treatment was more effective in removing of the surface oxide layer. Compared to the KOH solution treated sample, the alcohol-based HCl-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.3 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Ni/Au metal to p-type GaN be lowered by the surface treatment, which results in a drastic reduction in specific contact resistance.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yingwen Tang, Yingwen Tang, Xue Li, Xue Li, Yong Kang, Yong Kang, Xiangyang Li, Xiangyang Li, Haimei Gong, Haimei Gong, } "Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); doi: 10.1117/12.572681; https://doi.org/10.1117/12.572681


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