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20 January 2005 SnS films prepared by sulfuration of Sn precursor layers
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Abstract
In this study, tin precursor layers were deposited on ITO glass substrates by thermal evaporation, and sulphurised in a vacuum furnace at the temperature range between 423-673K, in order to translate the tin layers into compound SnS layers. All the layers synthesized were characterized with X-ray diffractograms, microstructure analysis. It was found that the best SnS films were synthesized for sulphurisation at temperature 573-673K, and they were polycrystalline with a strong {111} preferred orientation, and they had orthorhombic crystal structure with a grain size of a few hundred nanometers and exhibited near stoichiometric SnS composition. The near stoichiometric SnS film was measured to have a p-type electrical conductivity and a resistivity of the order of 102 Ω.cm , and its optical properties were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the wavelength range 400-2500nm, the films were transparent for a wavelength >1250nm.
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Shuying Cheng, Nanbao Zhong, Cichang Huang, and Guonan Chen "SnS films prepared by sulfuration of Sn precursor layers", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.568466
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