9 February 2005 Optical properties of ZnO cone arrays and influence of annealing on optical properties of ZnO-Zn coaxial nanocables
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The novel ZnO cone arrays with controllable morphology and ZnO-Zn coaxial nanocables have been synthesized by thermal evaporating metal Zn powders at low temperature of 570°C without a metal catalyst. The ZnO cone arrays were grown on the Si (100) substrates, and clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, cones with straight hexagonal pillar were achieved as the distance between the source and the substrates increased. X-ray diffraction showed that all of the cone arrays grow along c-axis. Raman and photoluminescence spectra revealed that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of ZnO cone arrays. ZnO-Zn nanocables were achieved in the region down stream with a temperature of 300°C. The PL measurements of the ZnO-Zn nanocables reveal a UV peak at 382nm corresponding to the free exciton emission originating from the ZnO shells, while violet luminescence centered around 424 and 431 nm are observed after annealed in Ar and air, respectively. The growth mechanisms of the ZnO cone arrays and ZnO-Zn nanocables are proposed.
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Xinhai Han, Xinhai Han, Guanzhong Wang, Guanzhong Wang, Jiansheng Jie, Jiansheng Jie, Qingtao Wang, Qingtao Wang, Dapeng Li, Dapeng Li, "Optical properties of ZnO cone arrays and influence of annealing on optical properties of ZnO-Zn coaxial nanocables", Proc. SPIE 5635, Nanophotonics, Nanostructure, and Nanometrology, (9 February 2005); doi: 10.1117/12.574752; https://doi.org/10.1117/12.574752

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