7 February 2005 Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries
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Abstract
A number of current and future optical and optoelectronic devices require the creation of structure in HfO2 film. The reactive ion beam etching of HfO2 film and photoresist mask in Ar/CHF3 gas mixture was examined as a function of ion energy, discharge composition and ion beam incident angle. The details of etch rate have been interpreted in terms of mechanism of etching. The etch rate has shown a square root dependence on ion energy and variation versus incidence angle. The CHF3- plasma produced some chemical enhancement in HfO2 film etching. Compared with pure argon etching, better selectivity and higher fidelity pattern transfer were achieved with Ar/CHF3 for HfO2 film over photoresisit mask. The AFM scans of etched HfO2 film by tapping mode showed good surface quality.
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Xudi Wang, Xudi Wang, Xiangdong Xu, Xiangdong Xu, Ying Liu, Ying Liu, Yiling Hong, Yiling Hong, Shaojun Fu, Shaojun Fu, } "Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries", Proc. SPIE 5636, Holography, Diffractive Optics, and Applications II, (7 February 2005); doi: 10.1117/12.573666; https://doi.org/10.1117/12.573666
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