7 February 2005 Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries
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A number of current and future optical and optoelectronic devices require the creation of structure in HfO2 film. The reactive ion beam etching of HfO2 film and photoresist mask in Ar/CHF3 gas mixture was examined as a function of ion energy, discharge composition and ion beam incident angle. The details of etch rate have been interpreted in terms of mechanism of etching. The etch rate has shown a square root dependence on ion energy and variation versus incidence angle. The CHF3- plasma produced some chemical enhancement in HfO2 film etching. Compared with pure argon etching, better selectivity and higher fidelity pattern transfer were achieved with Ar/CHF3 for HfO2 film over photoresisit mask. The AFM scans of etched HfO2 film by tapping mode showed good surface quality.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xudi Wang, Xudi Wang, Xiangdong Xu, Xiangdong Xu, Ying Liu, Ying Liu, Yiling Hong, Yiling Hong, Shaojun Fu, Shaojun Fu, } "Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries", Proc. SPIE 5636, Holography, Diffractive Optics, and Applications II, (7 February 2005); doi: 10.1117/12.573666; https://doi.org/10.1117/12.573666

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