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10 January 2005 Experimental determination of diffusion length in SWIR HgCdTe photodiodes
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Minority carrier diffusion length is a key parameter of material quality and gives an indication of diode performance. It is also one important parameter when considering the increase of the effective optical sensitive area caused by the lateral diffusion and the crosstalk between individual detectors on a focal plane array (FPA). In this paper, we perform diffusion length measurements with two methods on short wavelength infrared (SWIR) HgCdTe photovoltaic devices. One method is based on the different behaviors of electrons and holes in a variation magnetic field B and their effects on the saturation current density J0. The other method is an optical characterization technique called Laser Beam Induced Current (LBIC). The results were in good agreement with each other.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jia Jia, Guibin Chen, Xiangyang Li, and Haimei Gong "Experimental determination of diffusion length in SWIR HgCdTe photodiodes", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005);

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