10 January 2005 HgCdTe photovoltaic arrays formed by B+ ion implantation
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Abstract
The B+ ion implantation technology has been utilized to fabricate the n+ on P HgCdTe photovoltaic arrays with the HgCdTe epitaxial materials grown by Liquid Phase Epitaxial method. The effects of the implanting energy and dose on doping profile and approximate junction depth were calculated in detail, the calculated results are well consistent with the measurement results by the Second Ion Mass Spectrum experimental technique (SIMS). The 10×10 photodiode arrays in which each pixel size is nominally 20×20 μm2 and the pitch is 30 μm were made to investigate the electro-optic performance of devices. The device characterization such as array uniformity and optical crosstalk was non-destructively investigated by the technique of a scanning laser microscope. The two dimensional maps of Laser beam Induced Current (LBIC) signal have shown the good uniformity for the fabricated arrays, and there is no optical crosstalk between the arrays for the used B+ ion implantation conditions at the implanting energy of 130Kev and the dose of 2E14cm-2. The primary performance of photodiodes the zero bias dynamic resistance junction area product R0A, infrared response spectrum, and the detectivity D* have been measured, and the typical values for the test photodiodes with cutoff wavelength of 9.2 μm measured at 77K are: R0A=13.5Ω·cm2, average blackbody detectivity D* =7.18E10cm.Hz1/2W-1.
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Yan-Li Shi, Yan-Li Shi, Sheng-Qiong Lei, Sheng-Qiong Lei, Yi Cai, Yi Cai, } "HgCdTe photovoltaic arrays formed by B+ ion implantation", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.593764; https://doi.org/10.1117/12.593764
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