10 January 2005 Molecular beam epitaxy growth of CdTe on Si(211)
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Abstract
CdTe growth on Si is the major challenge for HgCdTe. The recent results on MBE growth of 3-in CdTe(211)B/Si are reported. The Si substrates were (211) orientated, and a low temperature surface cleaning process was employed. To obtain twin-free CdTe(211)B, nucleation process of ZnTe on Si was studied at different conditions. Under the optimal growth condition, the average FWHM value less than 120 arc sec of twin-free CdTe(211)B films for 10-12μm was obtained. The lowest FWHM value of 100 arc sec was achieved.
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Lu Chen, Yuan Zhang Wang, Yan Wu, Jun Wu, Mei Fang Yu, Yi Min Qiao, Li He, "Molecular beam epitaxy growth of CdTe on Si(211)", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.573170; https://doi.org/10.1117/12.573170
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