10 January 2005 Molecular beam epitaxy growth of CdTe on Si(211)
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CdTe growth on Si is the major challenge for HgCdTe. The recent results on MBE growth of 3-in CdTe(211)B/Si are reported. The Si substrates were (211) orientated, and a low temperature surface cleaning process was employed. To obtain twin-free CdTe(211)B, nucleation process of ZnTe on Si was studied at different conditions. Under the optimal growth condition, the average FWHM value less than 120 arc sec of twin-free CdTe(211)B films for 10-12μm was obtained. The lowest FWHM value of 100 arc sec was achieved.
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Lu Chen, Lu Chen, Yuan Zhang Wang, Yuan Zhang Wang, Yan Wu, Yan Wu, Jun Wu, Jun Wu, Mei Fang Yu, Mei Fang Yu, Yi Min Qiao, Yi Min Qiao, Li He, Li He, } "Molecular beam epitaxy growth of CdTe on Si(211)", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.573170; https://doi.org/10.1117/12.573170


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