30 December 2004 A high-g overload-protected accelerometer with a novel microstructure
Author Affiliations +
A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weiping Chen, Weiping Chen, Wei Wang, Wei Wang, Lei Tian, Lei Tian, Xiaowei Liu, Xiaowei Liu, Mingxue Huo, Mingxue Huo, Ruichao Zhang, Ruichao Zhang, Deyin Zhang, Deyin Zhang, } "A high-g overload-protected accelerometer with a novel microstructure", Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.581191; https://doi.org/10.1117/12.581191

Back to Top