30 December 2004 Electrochemical etching of deep-macropore array on p-type silicon wafers
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Abstract
The formation of deep macropore array of p-type Silicon in HF electrolyte has been investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolyte. HF concentration is a very important factor that determined whether electrochemical reaction was accomplished or not. By means of theoretical analysis and investigation, it is generally assumed that etching proceeds through sequential reaction of Si-H groups with F- to form Si-X, which determined whether electrochemical etching reaction was carried out or not. The electrochemical etching of p-type Silicon macropore array in aqueous fluoride solutions is satisfied with economic requirements for costs of fabricating deep macropores. The consequences are benefit to Silicon electrochemical deep macropore array etching technology.
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Yanjun Gao, Guozheng Wang, Qingduo Duanmu, Jingquan Tian, "Electrochemical etching of deep-macropore array on p-type silicon wafers", Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.572181; https://doi.org/10.1117/12.572181
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