3 January 2005 Study on photodamage of In:Er:LiNbO3 crystal waveguide substrates
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Proceedings Volume 5643, Advances in Optical Data Storage Technology; (2005); doi: 10.1117/12.574202
Event: Photonics Asia, 2004, Beijing, China
Abstract
In:Er:LiNbO3 crystals with fixed Er concentration of 1mol% and variable In concentration of 1mol%, 2mol% and 3mol% have been grown by the Czochralski method, and then was made into waveguide substrates. The directly observing facula method was employed to measure the photo-damage resistance ability of the substrates, and it is found that In(3mol%):Er:LiNbO3 has the highest photo-damage resistance ability among these three substrates. The structure was determined by the infrared transmittance spectra and the UV absorption spectra. The mechanism that the photo-damage resistance ability of the substrates increases with the increase of the doped concentration of In was discussed via the structure of the crystal.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wusheng Xu, Yuheng Xu, Jian Zhang, "Study on photodamage of In:Er:LiNbO3 crystal waveguide substrates", Proc. SPIE 5643, Advances in Optical Data Storage Technology, (3 January 2005); doi: 10.1117/12.574202; https://doi.org/10.1117/12.574202
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KEYWORDS
Crystals

Lithium

Absorption

Niobium

Resistance

Infrared radiation

Transmittance

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