The doping of [IrCl6]4- in cubic AgCl emulsion

Guoyi Dong; Xiuhong Dai; Xiaodong Tian; Li Han; Xiaowei Li

doi:10.1117/12.574259

3 January 2005 The doping of [IrCl₆]^4- in cubic AgCl emulsion

Guoyi Dong, Xiuhong Dai, Xiaodong Tian, Li Han, Xiaowei Li

Proceedings Volume 5643, Advances in Optical Data Storage Technology; (2005) https://doi.org/10.1117/12.574259
Event: Photonics Asia, 2004, Beijing, China

Abstract

Dopants can be substitutionally incorporated into AgX crystals and influence the photoelectron action and the latent image formation by introducing appropriate electron traps. The dopant [IrCl₆]^4- was introduced in either the core, the subsurface shell or the outer shell of cubic AgCl microcrystals and its concentration was varied from 2.60×10^-7mol/molAg up to 2.61×10^-⁵mol/molAg. The emulsion sample exposed to a YAG super short pulse laser (355nm, 35ps) were measured by microwave absorption and dielectric-spectrum technique. The experimental results show the photoelectron decay time at room temperature decreases with the doping concentration increasing for any given doping position especially as the doping near the core. Results also show the photoelectron decay time at room temperature increases when the doping position is closer to the surface especially for higher doping concentration at 2.61×10^-5 mol/molAg. This can be explained that [IrCl₆]^4- can act as both shallow electron trap and deep electron trap with doping condition varying. When the doping level is lower and doping position is closer to the surface, the sensitivity of AgCl emulsion is higher. The knowledge obtained from this study may be useful for practical microcrystal design making use of dopants.

Citation Download Citation

Guoyi Dong, Xiuhong Dai, Xiaodong Tian, Li Han, and Xiaowei Li "The doping of [IrCl₆]^4- in cubic AgCl emulsion", Proc. SPIE 5643, Advances in Optical Data Storage Technology, (3 January 2005); https://doi.org/10.1117/12.574259

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