1.55 &#956;m Ge islands resonant-cavity-enhanced narrowband detector

Chuan Bo Li; Bu Wen Cheng; Rong Wei Mao; Yu Hua Zuo; Jin Zhong Yu; Q. M. Wang

doi:10.1117/12.584260

17 January 2005 1.55-μm Ge islands resonant-cavity-enhanced narrowband detector

Chuan Bo Li, Bu Wen Cheng, Rong Wei Mao, Yu Hua Zuo, Jin Zhong Yu, Q. M. Wang

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.584260
Event: Photonics Asia, 2004, Beijing, China

Abstract

The high quality Ge islands material with 1.55μm photo-response grown on SOI substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO₂ interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 μm Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the backside of the sample with the buried SiO₂ layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.65 μm. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.

Citation Download Citation

Chuan Bo Li, Bu Wen Cheng, Rong Wei Mao, Yu Hua Zuo, Jin Zhong Yu, and Q. M. Wang "1.55-μm Ge islands resonant-cavity-enhanced narrowband detector", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.584260

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