17 January 2005 Application of Monte Carlo method to GaAs photoconductive semiconductor switches
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Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005); doi: 10.1117/12.577810
Event: Photonics Asia, 2004, Beijing, China
Abstract
Monte-Carlo method is adopted in GaAs PCSS's simulation, In the case of high optical fluence, space-charge field can intensity influence the movement of the carrier. Thus, space-charge field can intensity influence not only the shape of photo-electric current of PCSS's, but also the terahertz out put of photo-conducting antenna. In this paper, the forming and movement of space-charge field are simulated by means of Monte-Carlo method. And the result of simulate indicates that optically activated charge multi-domain exists in photoconductor. The forming of multi-domain is also explained in this paper.
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Wei Shi, Huiying Dai, Mingliang Gu, Guanghui Qu, Deming Ma, "Application of Monte Carlo method to GaAs photoconductive semiconductor switches", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.577810; https://doi.org/10.1117/12.577810
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KEYWORDS
Monte Carlo methods

Photoresistors

Gallium arsenide

Semiconductors

Switches

Optical simulations

Pulsed laser operation

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