Paper
17 January 2005 THz radiation from 3-mm parallel gap GaAs photoconductive dipole antenna
Wei Shi, Wanli Jia, Lei Hou, Xianbin Zhang, Ming Xu, Xuegang Xu
Author Affiliations +
Abstract
We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3 mm between two Au/Ge/Ni electrodes, triggered by 800 nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. The radiation amplitude present linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than normal GaAs dipole antenna. The maximum voltage can be hold by the Si3N4 insulated GaAs dipole antenna is about 2 times higher than normal GaAs dipole antennas. We simulate the THz radiations from insulated GaAs dipole antenna with Si3N4 layer and bare GaAs dipole antenna. The waveforms of the simulated normalized surface field are in close agreement with the waveforms of the experimental results.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Shi, Wanli Jia, Lei Hou, Xianbin Zhang, Ming Xu, and Xuegang Xu "THz radiation from 3-mm parallel gap GaAs photoconductive dipole antenna", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.577816
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Antennas

Terahertz radiation

Gallium arsenide

Silicon

Near field optics

Electrodes

Sapphire lasers

Back to Top