17 January 2005 THz radiation from 3-mm parallel gap GaAs photoconductive dipole antenna
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Abstract
We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3 mm between two Au/Ge/Ni electrodes, triggered by 800 nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. The radiation amplitude present linear to the exciting power when the applied voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than normal GaAs dipole antenna. The maximum voltage can be hold by the Si3N4 insulated GaAs dipole antenna is about 2 times higher than normal GaAs dipole antennas. We simulate the THz radiations from insulated GaAs dipole antenna with Si3N4 layer and bare GaAs dipole antenna. The waveforms of the simulated normalized surface field are in close agreement with the waveforms of the experimental results.
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Wei Shi, Wei Shi, Wanli Jia, Wanli Jia, Lei Hou, Lei Hou, Xianbin Zhang, Xianbin Zhang, Ming Xu, Ming Xu, Xuegang Xu, Xuegang Xu, } "THz radiation from 3-mm parallel gap GaAs photoconductive dipole antenna", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.577816; https://doi.org/10.1117/12.577816
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