17 January 2005 The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)
Author Affiliations +
In this paper, the photo-detected and controlled functions based on silicon photo-electronic Lambda transistor (PLBT) are reported. PLBT is composed of a npn vertical bipolar transistor as main device and a enhancement-mode MOSFET transistor as feedback device which connected in parallel across the base and collector terminals of bipolar transistor. Photo-electronic-lambda bipolar transistor (PLBT) is one important member of Si-photo electronic negative resistance devices. It has wide applications in photo-electronic coupler, light detector, light sensor and other photo-electronic circuit modules, which is significant for the further study of photo-electronic devices and circuits. When the Si-photo-electronic negative transistor device works as a load, it has two stable output states (bistability characteristics) with the change of the input light signals. Using the photo-bistable and self-locking characteristics of the PLBT, a photo-controlled Bistable Logic Circuit Element has been set up successfully. Through detail studying and analyzing to the operation feature and load feature of the photo-controlled bistable circuit, the nonlinear characteristic of the circuit is demonstrated. Furthermore the applications of this circuit element have been studied and verified.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shi-lin Zhang, Shi-lin Zhang, Bo Zhang, Bo Zhang, Wei-lian Guo, Wei-lian Guo, Lu-hong Mao, Lu-hong Mao, Pei-ning Zhang, Pei-ning Zhang, } "The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.572717; https://doi.org/10.1117/12.572717


Current technologies for very high performance VLSI ICs
Proceedings of SPIE (February 01 1991)
Nonlinear opto-isolator with response persistence function
Proceedings of SPIE (September 20 2002)
Molectronics: a circuit design perspective
Proceedings of SPIE (March 16 2001)
Resonant tunneling devices and circuits
Proceedings of SPIE (April 19 1996)
Stabilizing the response of Pd Ni alloy films to hydrogen...
Proceedings of SPIE (February 26 2001)
Optical negative resistance detector with LBT structure
Proceedings of SPIE (September 20 2002)

Back to Top