27 January 2005 A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography
Author Affiliations +
Abstract
T-shaped gate formation is a important process step in the fabrication of high frequency monolithic microwave integrated circuits (MMIC), many different lithography process have been used for this purpose, such as bi-layer or tri-layer using e-beam lithography, hybrid UV-e-beam lithography. Proximity x-ray lithography (PXL) has shown many advantages in the MMIC manufacturing, such as high resolution, large process windows, low cost and high throughout, and so on. In this article, a new ZEP520/P(MMA-MAA)/ZEP520 tri-layer process using synchrotron-based PXL is proposed for the T-shaped gate formation, without any additional intermediate layer, the resists intermixing problem has been solved successfully, a dark-field isolated trench x-ray mask was used for this purpose. A three stage development process using xylene for the head, MIBK:IPA=1:3 for the middle and xylene for the foot was also used. Initial work has shown this process to be robust.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changqing Xie, Changqing Xie, Dapeng Chen, Dapeng Chen, Jiebing Niu, Jiebing Niu, Ming Liu, Ming Liu, Tianchun Ye, Tianchun Ye, Futing Yi, Futing Yi, Liangqiang Peng, Liangqiang Peng, } "A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.573519; https://doi.org/10.1117/12.573519
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

An investigation of SU 8 resist adhesion in deep x...
Proceedings of SPIE (April 01 2004)
Trends In X-Ray Lithography
Proceedings of SPIE (June 29 1982)
X-ray phase mask: nanostructures
Proceedings of SPIE (July 06 1997)

Back to Top