27 January 2005 Analysis of nanometer-isolated trench diffract aerial image of both conventional and second-generation synchrotron-based proximity x-ray lithography
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Abstract
In this paper, Beam Propagation Method (BPM) with Fast Fourier Transforms(FFT) is employed to efficiently calculate the diffract image in the wafer plane for both conventional and second generation synchrotron-based proximity x-ray lithography(PXL). In the simulation, a dark-field isolated space pattern silicon nitride/Ta x-ray mask is used for conventional PXL and a diamond /Ta x-ray mask is used for second generation PXL, the diffract image’s dependency on absorber thickness, mask-wafer gap, effective total blur, linewidth and absorber sidewall slope has been numerically evaluated. For conventional PXL, in order to obtain a isolated trench resolution of 50nm, the mask-wafer gap should be controlled below 5 micron, the optimization condition is mask-wafer gap 5 micron, Ta absorber thickness 300nm, effective total blur 10nm, absorber sidewall slope 3°, the corresponding aerial image contrast is 0.457; For second generation, in order to obtain a isolated trench resolution of 50nm, the mask-wafer gap can be as large as 10 micron. In order to obtain a isolated trench resolution of 35nm, mask-wafer gap should be controlled below 5 micron.
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Changqing Xie, Dapeng Chen, Ming Liu, Tianchun Ye, Futing Yi, "Analysis of nanometer-isolated trench diffract aerial image of both conventional and second-generation synchrotron-based proximity x-ray lithography", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.573232; https://doi.org/10.1117/12.573232
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