27 January 2005 ArF immersion lithography using TWINSCAN technology
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Abstract
For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens, we have built a proto-type immersion scanner using TWINSCAN technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF), while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window.
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Jan Mulkens, Jan Mulkens, Bob Streefkerk, Bob Streefkerk, Martin Hoogendorp, Martin Hoogendorp, } "ArF immersion lithography using TWINSCAN technology", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.578071; https://doi.org/10.1117/12.578071
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